| 摘要 |
PURPOSE:To prevent the breakage of a transistor due to a high-pressure noise pulse generated by an external power source at the time of cutting a thin film resistor during the trimming. CONSTITUTION:P-N junction diodes 81-83 are inserted between NMOS transistors 31-33 and cutting voltage application pads 61-63. When high-pressure noise pulse from an external power source is applied to the pads 61-63, noise pulse is not transmitted to the NMOS transistors 31-33 by the one-way function of the diodes 81-83, and the transistor is prevented from breaking. |
