| 摘要 |
PURPOSE:To acquire a manufacturing method of an optical semiconductor device which controls a band gap of a formed film by a kind of a mask and an optical semiconductor device. CONSTITUTION:Crystal growth is selectively carried out on a semiconductor single crystal by using a substrate 101 having two or more kinds of non-single crystalline 102, 103 having different nuclear formation density and a semiconductor single crystal on a surface thereof to realize an optical semiconductor device having a layer structure 104 of change band gap. A material of the two or more kinds of non-single crystalline of different nuclear formation density can be different and a surface state thereof can be different. |
