| 摘要 |
<p>PURPOSE:To prevent breakage in contact hole by suppressing the plug loss therein. CONSTITUTION:An interlayer insulation film, i.e., a BPSG film 302, is deposited on a silicon substrate 301 and a contact hole 304 is made therein by photolithography (a). Polysilicon 305 is then deposited by such depth as a recess is formed on the contact hole (b). The polysilicon 305 is then etched to a part of the way by high rate etching (c), followed by etching of polysilicon and BPSG at same rate thus forming a contact plug 306 (d), (e). Finally, a wiring is formed by silicide 307 (f).</p> |
