| 摘要 |
<p>PURPOSE:To provide the phase shift mask capable of equaling the intensity of the light transmitted through the apertures of a substrate and the intensity of the light transmitted through phase shifters and improving the uniformity of the resolution patterns formed in the apertures of the transparent substrate and phase shifter parts. CONSTITUTION:This phase shift mask is constituted by forming a light shielding film 51 having desired opening patterns on the light transparent substrate 50 and forming the phase shift material 52 for shifting phases with the phases of the transmitted light in a part of the opening patterns. Buffer films 53 consisting of the same material as the phase shift material 52 are formed on both of the transmission parts 501 and the shifter parts 502. The film thickness of these buffer films 53 is specified to h=(lambda/4ns).{m-ns/(ns-1)}, (where, ns: the refractive index of shifters, lambda: an exposing wavelength, m: an integer) so as to equal the transmittance of the light transmitted through the transmission parts 501 and the shifter parts 502.</p> |
