发明名称 |
METHOD FOR DETERMINING EXCESS CARRIER LIFETIME IN SEMICONDUCTOR DEVICES |
摘要 |
Described is a method for excess carrier lifetime testing of semiconductor materials by the use of ultrasonically soldered contacts in obtaining open-circuit voltage decay measurements. The method is particularly adapted for use in in-line production testing of semiconductor wafers and does not require the use of high temperatures to bond contacts to the wafer being tested.
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申请公布号 |
US3697873(A) |
申请公布日期 |
1972.10.10 |
申请号 |
USD3697873 |
申请日期 |
1969.05.28 |
申请人 |
WESTINGHOUSE ELECTRIC CORP. |
发明人 |
ROBERT G. MAZUR |
分类号 |
G01R31/26;(IPC1-7):G01R31/22;B23K21/00 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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