| 摘要 |
<p>PURPOSE:To enable a thin film diode to be lessened in capacitance and easily manufactured by a method wherein a semiconductor layer is provided onto a first electrode layer deposited on a substrate, a second electrode layer is provided onto a buffer layer deposited on the semiconductor layer, and the semiconductor layer and the buffer layer are patterned into nearly the same shape. CONSTITUTION:A buffer layer 553 is provided between a semiconductor layer 543 deposited on a first electrode layer 413 and a second electrode layer 463. For instance, provided that the second electrode layer 463 is formed of Al, and the semiconductor layer 543 is formed of amorphous Si, the buffer layer 553 of Cr is formed as thick as 100nm so as to effectively prevent mutual diffusion in an after process. At this point, the buffer layer 553 is patterned after the same pattern with the semiconductor layer 543, so that only a film forming process through which the buffer layer 553 is formed is additionally provided to realize a thin film diode of this constitution without changing processes much.</p> |
