CURRENT LIMITING CIRCUIT

摘要

PURPOSE: To protect an instant overcurrent by providing a vertical depletion type MOS of double diffusion vertical type or an IGBT transistor and constituting the source and the gate of the transistor with one metallization. CONSTITUTION: A metallization 44 is formed by depositing several conductive layers. The same metallization is formed on the lower surface of an element. A two-terminal element with the metallization of upper and lower surfaces can be obtained corresponding to a conductive VDMOS depletion transistor for playing a role of source metallization and a gate metallization. An element can be mounted between two conductive wafers that play a role of a heat sink with upper and lower surfaces that are coated by metallization. The element receives an overload at the moment when the load is absorbed by the element and can be operated as a current-limiting circuit in an application field to be generated.