| 摘要 |
PURPOSE:To enhance the reliability and the yield of a semiconductor device by providing a pad excellent in the orientation property of a surface and by providing its formation method. CONSTITUTION:A pad 1 is constituted of a lower-layer conductive layer 13 formed on a substrate 11 and composed of an aluminum-based metal, of an orientation-property improvement film 16 formed on the lower-layer conductive layer 13 and composed of titanium nitride and of an upper-layer conductive layer 17 formed by a high-temperature sputtering method and composed of an aluminum-based metal. The pad 1 is formed by a first process in which the lower-layer conductive film 13 is formed on the substrate 11, by a second process in which the orientation-property improvement film 16 is formed on the lower-layer conductive layer 13 and by a third process in which the upper- layer conductive layer 17 is formed on the orientation-property improvement film 16 by the high-temperature sputtering method. Thereby, the upper-layer conductive layer 17 is formed on the orientation-property improvement film 16 in a surface state with improved orientation of the lower-layer conductive layer 13, and the alignment accuracy of the pad is enhanced.
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