| 摘要 |
PURPOSE:To accelerate circuit operation and to reduce a defective operation in a read only storage circuit. CONSTITUTION:This circuit is the read only storage circuit formed on a semiconductor substrate, and is provided with plural memory cell transistors 1, a decoder circuit 2 and a word line W-1, a power source wiring V-1, a grounded wiring G-1, a wiring contact 6 for selecting optional memory cell, a bit line B-1 outputting an output signal and a sense amplifier 7 for amplifying the output signal. In the memory cell transistor 1, a gate terminal 4 is connected to the word line W-1, and the drain terminal 3 is connected to the bit line B-1, and a source terminal 6 part forms a three layer wiring structure, and is connected to any one of the power source wiring V-1 or the grounded wiring G-1 by a through hole 6. When the word line W-1 is activated by the decoder circuit 2, the memory cell transistor 1 is activated, and a voltage level of one of the power source wiring V-1 and the grounded wiring G-1 connected to the source terminal 5 is outputted on the bit line B-1 as the logical binary data. |
