| 摘要 |
PURPOSE: To manufacture charge sensitive circuit element material by using boron 11 which is not sensitive, by a method wherein inner component of boron is so improved that charge amount of boron in the charge sensitive circuit element material is not affected by cosmic rays neutrons, and sensitive boron 10 is essentially eliminated. CONSTITUTION: In a charge sensitive circuit element like a volatile storage cell 200, boron 10 in boronsilicate glasses 230, 240 which are directly deposited on a board 206 on the arrangement of storage cells are essentially eliminated, and soft error is reduced by using boron 11. When the boron 10 captures neutrons of cosmic rays which are naturally generated, the boron 10 is splitted and apt to generate alpha particles of 1.47 MeV. Since the boron 10 has a large neutron capturing section, neutrons are easily captured. The baron 11 is not splitted. |
