PROCEDE DE FABRICATION DES CONDUCTEURS-POUTRES POUR DISPOSITIFSSEMICONDUCTEURS

摘要

Cantilevered beam leads are formed on a semiconductor wafer by a process which includes the steps of evaporating titanium, palladium, and gold in a single pump-down of the evaporation apparatus. Prior to the application of these layers, the contact areas of the device are conditioned for ohmic contact by depositing an aluminum layer on the wafer and then heating the wafer in a non-oxidizing atmosphere to form an aluminum-silicon alloy in the contact regions. Any unalloyed aluminum is then removed and the evaporated beam lead system is deposited. Thereafter the metallization pattern is defined photolithographically.