发明名称 |
FABRICATION AND STRUCTURE OF ELECTRON-EMITTING DEVICES HAVING HIGH EMITTER PACKING DENSITY |
摘要 |
Electron-emissive elements in area electron emitters suitable for flat-panel displays are fabricated at high packing density. The electron-emissive elements have various shapes such as filaments (30A, 30B, or 30/88D1), cones (1181 or 142D), and cone-topped pedestals (92/1021). A typical emitter contains a substrate (20) that provides structural support. A patterned lower non-insulating region (22) formed with parallel lines is provided over insulating material of the substrate. Electron-emissive filaments (30A, 30B, or 30/88D1) are formed in pores (281) extending through an insulating layer (24) furnished over the lower non-insulating region. A patterned non-insulating gate layer (34B, 40B, or 46B) is typically provided over the insulating layer to form a gated device. Charged-particle tracks (261 or 50A1/50B1) are preferably employed to define locations for electron-emissive features. Usage of charged-particle tracks enables the electron-emissive features to be quite small and spaced closely together.
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申请公布号 |
WO9507543(A1) |
申请公布日期 |
1995.03.16 |
申请号 |
WO1994US09762 |
申请日期 |
1994.09.08 |
申请人 |
SILICON VIDEO CORPORATION |
发明人 |
MACAULAY, JOHN, M.;SPINDT, CHRISTOPHER, J.;SEARSON, PETER, C.;DUBOC, ROBERT, M., JR. |
分类号 |
H01J1/30;H01J1/304;H01J3/02;H01J9/02;H01J29/04;H01J31/12;(IPC1-7):H01J9/02 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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