发明名称 FABRICATION AND STRUCTURE OF ELECTRON-EMITTING DEVICES HAVING HIGH EMITTER PACKING DENSITY
摘要 Electron-emissive elements in area electron emitters suitable for flat-panel displays are fabricated at high packing density. The electron-emissive elements have various shapes such as filaments (30A, 30B, or 30/88D1), cones (1181 or 142D), and cone-topped pedestals (92/1021). A typical emitter contains a substrate (20) that provides structural support. A patterned lower non-insulating region (22) formed with parallel lines is provided over insulating material of the substrate. Electron-emissive filaments (30A, 30B, or 30/88D1) are formed in pores (281) extending through an insulating layer (24) furnished over the lower non-insulating region. A patterned non-insulating gate layer (34B, 40B, or 46B) is typically provided over the insulating layer to form a gated device. Charged-particle tracks (261 or 50A1/50B1) are preferably employed to define locations for electron-emissive features. Usage of charged-particle tracks enables the electron-emissive features to be quite small and spaced closely together.
申请公布号 WO9507543(A1) 申请公布日期 1995.03.16
申请号 WO1994US09762 申请日期 1994.09.08
申请人 SILICON VIDEO CORPORATION 发明人 MACAULAY, JOHN, M.;SPINDT, CHRISTOPHER, J.;SEARSON, PETER, C.;DUBOC, ROBERT, M., JR.
分类号 H01J1/30;H01J1/304;H01J3/02;H01J9/02;H01J29/04;H01J31/12;(IPC1-7):H01J9/02 主分类号 H01J1/30
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