| 摘要 |
The image sensor is for a facimile with a function of photoelectric conversion without using rod lens array. The sensor has a matrix driving system switching a signal of photoelectric conversion device by a thin film transistor (TFT) of amorphous silicon. The sensor consists of a photoelectric conversion region (B-B') with a photo diode (13), a light guide film (14) and a light guide window (15) on a transparent substrate, a TFT (16) region, and a matrix (17) region.
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