Light-emitting component of II-VI semiconductor material

摘要

LED or laser diode on a substrate (1) of II-VI semiconductor material, having at least one active layer (2) and a barrier layer (3) of binary or ternary II-VI semiconductor material, in particular CdMgTe with high magnesium content for emission in the blue spectral range, and with matching of the layer thicknesses and lattice constants to the substrate, in such a way that the structure of the crystal lattice of the substrate is imposed on these grown layers. <IMAGE>