发明名称 |
Method for fabricating an optical semiconductor device. |
摘要 |
<p>A method for fabricating an optical semiconductor device includes the steps of forming at least two stripes of dielectric parallel to each other with a predetermined interval on a semiconductor substrate, growing a crystal selectively between the two stripes, and forming a multi-layer structure which is required to have a width determined by the crystal grown between the two stripes. In such a method, the width of the multi-layer structure including an active layer or a waveguide is controlled precisely, because there is no step of etching a semiconductor layer, so that the characteristics of the device may improve and the yield may increase. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0643461(A2) |
申请公布日期 |
1995.03.15 |
申请号 |
EP19940118307 |
申请日期 |
1991.08.26 |
申请人 |
NEC CORPORATION |
发明人 |
SASAKI, TATSUYA, C/O NEC CORPORATION;MITO, IKUO, C/O NEC CORPORATION;KATOH, TOMOAKI, C/O NEC CORPORATION |
分类号 |
H01L33/00;H01S3/1055;H01S5/026;H01S5/042;H01S5/0625;H01S5/12;H01S5/16;H01S5/20;H01S5/227;H01S5/343;(IPC1-7):H01S3/19;H01S3/025 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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