发明名称 A method for producing a precise semiconductor alloy composition from input variables under nonlinear incorporation conditions.
摘要 <p>A process for manufacturing precise alloy compositions in nonlinear alloy systems. The invention implements a new quadratic fitting function that relates alloy composition cA for a variable A to input fluxes fA and fB, as cA=fA&lt;2&gt;/(fA&lt;2&gt;+ beta fB&lt;2&gt;). beta is a parameter that is used to modify the incorporation of the Group V input variable B. This modification is necessary because of different surface populations of Group V dimer species. This new fitting function precisely predicts alloy compositions in nonlinear systems, such as the GaAs1-yPy, system, where y is set equal to the composition cA.</p>
申请公布号 EP0643426(A2) 申请公布日期 1995.03.15
申请号 EP19940306424 申请日期 1994.08.31
申请人 AT&T CORP. 发明人 CUNNINGHAM, JOHN EDWARD;GOOSSEN, KEITH WAYNE
分类号 C30B23/08;C30B29/40;H01L21/20;H01L21/203;H01L31/18;(IPC1-7):H01L31/18;H01L29/12;H01L33/00 主分类号 C30B23/08
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