发明名称 |
Storage capacitor with a conduction oxide electrode for metal oxide dielectrics. |
摘要 |
<p>A capacitor having a high dielectric constant and method of making the same is disclosed. The capacitor (10) comprises a bottom electrode (12) comprising a conductive oxide layer deposited upon a substrate (110) by chemical vapor deposition. A dielectric layer (14) having a high dielectric constant is deposited upon the conductive oxide. Lastly, a counter electrode (16) is formed upon the dielectric layer. The dielectric material is selected in the group consisting of:
tantalum oxide (Ta₂O₂), strontium titanium oxide (SrTiO₃), and barium titanium oxide (BaTiO₃).</p> |
申请公布号 |
EP0643395(A1) |
申请公布日期 |
1995.03.15 |
申请号 |
EP19940480064 |
申请日期 |
1994.07.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAPPLE-SOKOL, JONATHAN DANIEL;CONTI, RICHARD ANTHONY;GAMBINO, JEFFREY PETER |
分类号 |
H01L21/8242;H01L27/04;H01L21/02;H01L21/822;H01L27/10;H01L27/108;(IPC1-7):G11C11/24;H01L29/92 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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