发明名称 Storage capacitor with a conduction oxide electrode for metal oxide dielectrics.
摘要 <p>A capacitor having a high dielectric constant and method of making the same is disclosed. The capacitor (10) comprises a bottom electrode (12) comprising a conductive oxide layer deposited upon a substrate (110) by chemical vapor deposition. A dielectric layer (14) having a high dielectric constant is deposited upon the conductive oxide. Lastly, a counter electrode (16) is formed upon the dielectric layer. The dielectric material is selected in the group consisting of: tantalum oxide (Ta₂O₂), strontium titanium oxide (SrTiO₃), and barium titanium oxide (BaTiO₃).</p>
申请公布号 EP0643395(A1) 申请公布日期 1995.03.15
申请号 EP19940480064 申请日期 1994.07.07
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHAPPLE-SOKOL, JONATHAN DANIEL;CONTI, RICHARD ANTHONY;GAMBINO, JEFFREY PETER
分类号 H01L21/8242;H01L27/04;H01L21/02;H01L21/822;H01L27/10;H01L27/108;(IPC1-7):G11C11/24;H01L29/92 主分类号 H01L21/8242
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