Method of gate implantation.

摘要

A method for forming silicon integrated circuits is disclosed. Ion implantation of polysilicon gates is accomplished by directing a dopant species (21) at a polysilicon layer (19) at an angle instead of normal incidence. The angularly directed dopant species cannot channel through the polysilicon layer and, furthermore, the dopant species "sees" a thicker effective polysilicon layer (19). <IMAGE>