发明名称 |
Semiconductor device and associated fabrication method. |
摘要 |
<p>A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer. <IMAGE></p> |
申请公布号 |
EP0643421(A2) |
申请公布日期 |
1995.03.15 |
申请号 |
EP19940112986 |
申请日期 |
1994.08.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YANO, KOUSAKU;SUGIYAMA, TATSUO;UEDA, SATOSHI;NOMURA, NOBORU |
分类号 |
H01L21/205;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/29 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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