发明名称 |
Integrated circuit transistor having drain junction offset. |
摘要 |
<p>Method comprises: forming gate insulation over a conductive layer; adding gate electrode; forming gate sidewall spaces; masking drain and implanting fast-diffusing dopant (I) into the source region; removing the mask and implanting slow-diffusing dopant (II) into the drain region; and annealing to diffuse the dopants so that a drain junction offset results.</p> |
申请公布号 |
EP0643419(A2) |
申请公布日期 |
1995.03.15 |
申请号 |
EP19940306318 |
申请日期 |
1994.08.26 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
BRYANT, FRANK RANDOLPH;HODGES, ROBERT LOUIS |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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