| 摘要 |
<p>This film capacitors in accordance with the present invention include a silicon electrode (22), a first electrode layer (24) consisting of either one of titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and compounds thereby, formed on the silicon electrode, a second electrode layer (25) formed on it consisting of platinum, palladium or rhodium, a dielectric layer (26) formed on it consisting of an oxide ferroelectric substance such as BaTiO3 and a third electrode layer (27) formed on top of it. As the first electrode layer, use may also be made of rhenium oxide, osmium oxide, rhodium oxide or iridium oxide.</p> |
