发明名称 Schottky junction device.
摘要 [Object] To provide a Schottky junction device having a super-lattice arranged on the Schottky interface in order to secure a high Schottky barrier and at the same time showing a high speed response by resolving the phenomenon of piled-up holes at the upper edge of the valence band, while maintaining the height of the Schottky barrier. [Constitution] A Schottky junction device having a Schottky junction of a semiconductor and a metal and a superlattice on the interface of the semiconductor and the metal, wherein the upper edge of the valence band of said superlattice is varied to show a turn to a specific direction. [Advantages] The phenomenon of hole-piling up at the upper end of the valence band is resolved while maintaining the height of the Schottky barrier and consequently such a Schottky junction device shows an excellent high speed response. <IMAGE>
申请公布号 EP0594442(A3) 申请公布日期 1995.03.15
申请号 EP19930308406 申请日期 1993.10.21
申请人 FURUKAWA ELECTRIC CO LTD 发明人 SHIMIZU HITOSHI;HIRAYAMA YOSHIYUKI;IRIKAWA MICHINORI
分类号 H01L29/47;H01L29/872;H01L31/0352;H01L31/108 主分类号 H01L29/47
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