<p>An apparatus (1) for growing a single crystal is disclosed which includes a double crucible assembly (5). the double crucible assembly (5) has an outer crucible (11) and an inner crucible (12) disposed in the outer crucible (11). A support member (14) is provided for supporting the inner crucible (12), and the support member (14) is formed of an inorganic oxide non-reactive with silicon oxide. The upper end portion (12a) of the inner crucible (12) may be formed of the same inorganic oxide. Alumina or mullite is suitable as the inorganic oxide. With the above construction, silicon single crystals obtained by the crystal growing apparatus (1) will be free of contamination by carbon or heavy metals, and will exhibit excellent quality. <IMAGE></p>
