SEMICONDUCTOR DEVICE ISOLATION METHOD

摘要

The method includes the steps of forming a buffer layer (32) and a 1st oxidation stopper layer (34) on the semiconductor substrate (30) to pattern the layer (34) to form an opening part (37) at a device isolating region, partially etching the buffer layer to form an under cut portion (B) under the spacer (38), depositing oxidising materials on the whole substrate to implant channel stopper ions thereinto to form a channel stopper layer (42), oxidising the susbstrate to form a field oxide film (45), and removing the residual material layers except the field oxide film to form a device isolating region, thereby preventing the leakage current between the devices.