| 摘要 |
The method includes a thermal oxidation process for forming an SiO2 film (3) on a silicon substrate (1), a 1st Si3N4 deposition process for deposition and heat-treating an Si3N4 film (4) on the film (3), an Si deposition process for depositing and heat-treating an Si film (5) on the film (4), a 2nd Si3N4 deposition process for depositing and heat-treating on Si3N4 film (2) on the film (5), a window formation process for etching the back films (3,4,5,2) to form a window, a sensor device deposition process for depositing a sensor device on the upper film (2), and a process for etching the silicon substrate (1) and film (3) through the window by an anisotrophic etching solution, thereby using a poly-Si as a membrane material to improve the sensitivity of sensor.
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