Method for fabrication of semiconductor device having polycrystalline silicon and metal silicides

摘要

A method of fabricating a semiconductor device having a semiconductor substrate, a MOS transistor formed on one surface of the semiconductor substrate, and a capacitor is disclosed. The MOS has a gate electrode with a polycrystalline silicon layer and a metal silicide layer. The capacitor includes a first polycrystalline silicon layer which forms a lower electrode layer, an insulating interlayer, and a second polycrystalline silicon layer which forms an upper electrode, the first and second polycrystalline silicon layers sandwiching the insulating interlayer.