MAKING METHOD OF GATE ELECTORDE

摘要

The method includes the steps of sequentially forming a gate oxide film (1), a first conducting layer (3) of impurity doped polysilicon materials, a first metal layer (5) of titanium silicide, and a first cap layer (7) on the semiconductor substrate (10), forming a photoresist pattern on the layer (7), patterning the cap layer (7), removing the polymer materials generated upon etching the photoresist pattern and the layer (7), and etching the layers (3,5) by using the patterned cap layer to form a gate electrode, thereby removing the photoresist pattern and polymer materials before the titanium silicide etching process to form the profile of gate electrode vertically.