| 摘要 |
The method improves a protecting ability from an electro static discharge by forming polycrystalline silicon layer on a diode of the protected circuit. The method comprises the steps of; forming a field oxide film (2) on the substrate (1), forming the first impurity-doped layer on an active area, forming the second impurity-doped layer on the neighboring active area, forming an oxide layer (3) on the whole surface, forming a window on the impurity-doped layers, forming and recrystallizing a polycrystalline silicon layer (4) on the whole surface, forming p- or n-type polycrystalline silicon layer (7) by doping ions, removing the unnecessary part of the polycrystalline silicon layer by photolithography, and forming a diode pattern, an insulation layer (3a), and an electrode (8).
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