| 摘要 |
The method includes spraying melted metal material (11) in a tundish (12) under high temp. of inert gases circumstances, with a spray unit (13) and colliding the melted metal, i.e., Al or Cu of liquid droplet state against a silicon substrate (14) at a high speed to solidify the Al or Cu metal droplets on the substrate (14) rapidly, thereby forming a flat wiring layer on the substrate to improve step coverage and uniformity.
|
