| 摘要 |
The method includes the steps of alternately depositing undoped poly silicon films (9,3,5) and in-situ polysilicon films (2,4) on a semiconductor substrate. The deposition process uses SiH4 and or Si2H6 gases as a silicon source to improve the step coverage. The method for undoped polysilicon includes the steps of depositing a polysilicon film on the substrate at a high temp., coating and over-etching an SOG (spin on glass) film thereon and removing the SOG film.
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