| 摘要 |
A semiconductor memory device including a plurality of memory cells of one-transistor and one-capacitor type is disclosed. Each of the memory cells includes a cell active region surrounded by a trench isolation region, a trench formed to cross the cell active region to thereby divide a surface portion of the cell active region into first and second parts, a word line formed in the trench in isolation form the cell active region by a gate insulating film, source and drain regions respectively formed in the first and second parts in contact with the trench, a first insulating film formed to cover the cell active region and the word line, a bit line formed in contact with a part of the drain region through a first contact hole provided in the first insulating film, a second insulating film formed to cover the bit line and the first insulating film, a storage electrode formed in contact with a part of the source region through a second contact hole provided in the first and second insulating films, a dielectric film formed on the storage electrode, and a cell plate electrode formed on the dielectric film.
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