| 摘要 |
The charge coupled device (CCD) image sensor of the frame-transfer-type with a shutter function, and an over-flow drain (OFD) function, increases photoelectric conversion effect with decreased thickness of a surface layer and a simple structure. The sensor is made by the steps of forming P--type substrate of a low concentration (11), n-type channel area (12) for generation and transfer of the image signal electric charge, P-type barrier layer (13) for controlling the over flow drain (OFD) and shutter voltage on P++-type substrate (10) of a high concentration, forming channel preventing area (14) and n-type contact electrode (15) repeatedly in turns, forming the oxide layer (16) on the surface, forming contact (17) between n-type contact electrode (15) and the oxide layer (16). The sensor can prevent blooming from the overproduction of the image signal electric charge.
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