| 摘要 |
The method includes the steps of sequentially forming a field oxide film (2), a buffer oxide film (8) and an insulating film (9) for an etching barrier on a silicon substrate (1), forming a photomask (10) over the film (2) to etch the films (9,8) partially, removing the residual photomask (10) on the film (9), forming a gate oxide film, a gate poly (3), and a poly oxide film (4) on the film (9) to implant LDD ions thereinto to form an LDD region into the substrate (1), depositing and etching a spacer oxide film (5) thereon to form a gate spacer (5'), and implanting high concentration of ions thereinto to form a high concentration of ion implantation region (7) into the substrate, thereby preventing the bird's beak of the device isolation film from being damaged to reduce the leakage current.
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