发明名称 |
Process for making self-aligned source/drain polysilicon or polysilicide contacts in field effect transistors |
摘要 |
A process for forming field effect transistors having self-aligned source/drain contact includes: forming an gate overlying a portion of a semiconductor; forming a first sidewall spacer on the gate; forming a source/drain region in the semiconductor; depositing a conductive layer over the semiconductor so that a step is formed in the conductive layer in a region overlying the gate and the first sidewall spacer; forming a second sidewall spacer on the step; forming a protective layer over a portion of the conducting layer not covered by the second sidewall spacer; removing the second sidewall spacer to expose a portion of the conductive layer but leave covered a portion of the conductive layer underlying the protective layer; and removing the exposed portion of the conductive layer to leave a portion of the conductive layer in contact with the source/drain region and electrically isolated from the gate. The portion of the conductive layer left is the self-aligned contact. Typically, the conductive layer is polysilicon but may alternatively be polysilicide or silicide.
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申请公布号 |
US5397722(A) |
申请公布日期 |
1995.03.14 |
申请号 |
US19940273534 |
申请日期 |
1994.07.11 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BASHIR, RASHID;HEBERT, FRANCOIS |
分类号 |
H01L21/336;H01L21/768;H01L29/417;(IPC1-7):H01L21/335 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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