| 摘要 |
An etching membrane (3) and a photo register (2) were deposited in sequence on the basic plate (4) and the mask (1) was mounted on it with predetermined interval between the photo register and the mask, then 10-30% irradiation of total irradiation was applied to them and then the residual irradiation was applied again at the contacted state to obtain the slant pattern of the photo register. The resulted pattern was baked at 130-140≦̸C for 20-30 min then the photo register was melted and the wider pattern than that of expected one could be obtained.
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