SEMICONDUCTOR DEVICE AND ITS PRODUCTION

摘要

PURPOSE:To prevent the exposure of an Al film to a resist developer by an insulating protective film serving as protection at the time of working a source- drain film by forming source-drain electrodes into a laminated structure of a metallic layer and insulating layer. CONSTITUTION:The Al film is patterned and formed as gate electrodes 2 on one main plane of a transparent substrate 1 and a semiconductor layer is so formed as to overlap on a part of the gate electrodes via an insulating thin-film layer 3. An ITO film is then patterned and formed as pixel electrodes 4. A laminated layer 5a of Ti and Al as a metallic film and an SiNx film as an insulating film 6 are thereafter laminated and formed and are patterned and formed to obtain the source-drain electrodes 5. A TFT array substrate 7 is completed in such a manner. The gate insulating thin film 3 is preferably made to remain on the gate drawing out electrodes at this time. The metallic film 5a and the insulating film 6 are formed as the source-drain electrodes in such a manner, by which the insulating film 6 is acted as the protective film at the time of processing the source-drain film and the exposure of the Al to the resist developer is prevented.