| 摘要 |
PURPOSE:To obtain a light emitting diode capable of bringing a p type contact layer and a p type electrode into excellent ohmic contact as well as generating a working voltage not exceeding 10V. CONSTITUTION:The light emitting diode is provided with a p type contact layer 30 formed on a compound semiconductor layer 24, where this p type contact layer 30 is composed of the first contact layer 32, the second contact layer 36 and the a plurality of quantum well structure 34 comprising a plurality of barrier layers and a plurality of quantum well layers formed between the first and second contact layers 32 and 36, where the thickness of the barrier layer is 0.3-1,7nm and the numbers of the quantum well layers are 3-6. |
