| 摘要 |
PURPOSE:To enable current control at a low voltage, by using a tuunel phenomenon, and reduce power consumption, by connecting two ohmic electrodes with mini bands different in potential energy. CONSTITUTION:An undoped GaAs buffer layer 2 is formed on a GaAs substrate 1, and a superlattice layer 3 as a channel layer is formed on the layer 2. In a source region, the superlattice is turned into mixed crystal by thermal diffusion of Si in the superlattice layer 3, and an alloy layer 4 is formed. A source electrode S is formed on the alloy layer 4. A drain region 5 is formed on the superlattice layer 3, and a drain electrode D is formed on the drain region 5. An insulating layer 6 and a gate electrode G are formed between the source electrode S and the drain electrode D. The gate electrode G is constituted as Schottky structure or MIS structure, and the carrier concentration in a channel can be changed without generating a leak current. |
