| 摘要 |
PURPOSE:To form a multilayer wiring while planarizing the interlayer insulation film and updating a predetermined alignment mark. CONSTITUTION:The method for fabricating a semiconductor device comprises a step for making a contact hole 13 through an insulation film 12 formed on a substrate 11 above a lower wiring layer, a step for forming a metallic material 14 on the substrate 11 where the contact hole 13 is made, a step for removing the metallic material 14 except the contact hole, a step for making an alignment opening on the substrate 11, and a step for forming an upper wiring layer on the substrate where the alignment opening is made. |
