| 摘要 |
<p>PURPOSE:To recover interspersed cell defects by providing a memory cell for storing an address of a defective cell, disposing the defective row memory cell adjacent to a normal cell array, and controlling a substitute row memory cell at a row line for normal cell control. CONSTITUTION:A spare memory cell, M1, a defective row memory cell M2 and a defective cell column memory cell M3 are provided in a normal memory cell M. When defective row and column are selected, data from the spare cell is read instead of the defective cell by read data switching means. Thus, the cell can be substituted for the spare cell at each one unit. Accordingly, a malfunction interspersed in an array such as a threshold voltage malfunction of the cell, an insulation failure of a gate insulating film, etc., can be recovered. Further, a nonvolatile ROM having a faster reading speed is obtained.</p> |
