SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To make the surface of the ground of a silicon oxide film uniform and high in quality, wherein the silicon oxide film is formed through a CVD method where organic silicon and O3 are made to react with each other. CONSTITUTION:A first wiring layer 16 is partially formed on the primary surface of a semiconductor substrate 10, and a molecular layer 24 of molecules possessed of hydrophobic groups such as hexamethyldisilazane (HMDS) is formed on all the primary surface of the substrate 10 and the first wiring layer 16. Then, a TEOS-O3 film 22 or a silicon oxide film is formed on all the molecular layer 24 through an atmospheric CVD method wherein O3 and tetraethoxysilane (TEOS) are made to react with each other, and then a second wiring layer 23 is formed on the TEOS-O3 film 22.