| 摘要 |
<p>PURPOSE:To form incompatible TFT characteristics on the same substrate, by constituting TFT's of the peripheral circuit part of crystalline silicon films constituted in the direction parallel to the carrier flow, and constituting TFT's of the picture element part of crystalline silicon constituted in the direction vertical to the carrier flow. CONSTITUTION:In an active layer 110, the source/drain direction is in parallel with the crystallization direction. In an active layer 111, the source/drain direction is vertical to the crystallization direction. As the result, TFT's formed in the active layer 110 have characteristics that the ON current is large, and TFT's formed in the active layer 111 have characteristics that the OFF current is small. Thereby the constitution capable of high speed operation can be obtained in the peripheral circuit part, and the constitution wherein TFT's having small OFF current necessary for charge holding are arranged can be obtained. Hence the incompatible TFT characteristics can be formed on the same substrate.</p> |
