| 摘要 |
<p>PURPOSE:To form an electron emission part with high positional accuracy by processing one part of the conductive film made on an insulating substrate by the use of the probe of a scanning type of tunneling microscope, and then, applying a current treatment. CONSTITUTION:Element electrodes 12 and 13 consisting of Ni are made on the surface of an insulating quartz substrate 11 cleaned with organic solvent. Hereon, solution containing organic palladium is applied, and then it is heat- treated to form a conductive fine particle thin film 14 consisting of paradium oxide fine particles. Next, tungsten fin particles 16 are formed by shifting the probe 15 of a scanning type of tunneling microscope on which tungsten atoms are stuck and bringing it into contact with the film or separating it while confirming a tunnel current. When pulse voltage is applied between the electrodes 12 and 13, the structural change of the film 14 occurs from the place of particles 16, and the electron emission part 17 consisting of a crack can be made with the positional accuracy on atom scale.</p> |
