| 摘要 |
<p>PURPOSE:To improve the quality of a film and raise the emission rate for an electron emission element and heighten the performance for other MIM structure elements by anodizing an insulating layer in specified formation current density range and metal in specified oxidation speed range respectively. CONSTITUTION:Al is formed by 15nm as a lower electrode 13 on an insulating substrate 14 by RF magnetron sputtering or the like. This is put in formation liquid being made by neutralizing for example, 1-3% tartaric acid aqueous solution with ammonium water and diluting it with ethylene glycol, and it is anodized with a platinum wire as a cathode. At this time, formation current density is 0.0001-0.1A/m<2>, and oxidation speed is 0.0002-0.2nm/min. An insulator such as SiO2 is deposited by 50nm on the formed insulating layer 12, and this is defined as a protective layer 15. Furthermore, Au is film-formed by about 5nm by vapor deposition method or the like, and this is defined as an upper electrode 11, and hereon Au, Al, etc., are deposited by about 50nm so as to make an electrode terminal 16.</p> |
