CAPACITOR AND ITS MANUFACTURE

摘要

PURPOSE: To obtain a simplified charge storage capacitor having a high dielectric constant dielectric by depositing a dielectric having high dielectric constant, selected from a group of Ta2 O5 , SrTiO3 and BaTiO3 , on a conductive oxide by CVD and then forming a counter electrode on the dielectric layer. CONSTITUTION: A conductive oxide 32 is deposited and a dielectric 34 having high dielectric constant is blanket deposited thereon. High dielectric constant dielectric of the dielectric layer 34 is selected from a group of tantalum oxide (Ta2 O5 ), strontium titanate (SrTiO3 ) and barium titanate (BaTiO3 ). The dielectric layer 34 is formed by CVD. A counter electrode layer 36 is then formed of tungsten (W), platinum (Pt) or titanium nitride (TiN) by CVD sputtering or deposition thus obtaining a simplified charge storage capacitor having a high dielectric constant dielectric.