| 摘要 |
PURPOSE:To form a transistor as a high-speed device in a peripheral circuit section without increasing man-hours when a concave transistor is used in a cell section. CONSTITUTION:A buried-electrode type concave transistor is formed in a transfer gate of a cell section, the cell section is fully flattened, a transistor wherein the gate electrode 9G of a peripheral circuit is formed of the same wiring layer with a bit line 9B of a memory cell is provided, and a storage node contact 11 is provided to a bit line in a self-aligned manner. |
