| 摘要 |
PURPOSE:To prevent light emitting seepage in the periphery of a p type region and leakage light emitting from an adjacent p type region by specifying the thickness of an n type GaAs substrate and a doping concentration of Zn to form the p type region thereon. CONSTITUTION:A diffusion mask 2 comprising nitride silicon, oxide silicon and the like is provided on an n type GaAs substrate 1. As this diffusion mask 2 diffuses Zn at a thickness of 10 to 5Omum in the same pitch over the substrate 1, a p type legion 3 having a p type conductivity is formed to form a semiconductor light emitting device. Note that the thickness of the n type GaAs substrate 1 shall be over 25mum. When the peak intensity of the emission spectrum is I0, the Zn doping concentration to the p type region 3 is so determined that the longest wavelength end lambdam of an 10/2 portion will be under 910nm. Thus, light emitted in the p type region is absorbed before reaching the lower surface of the n type GaAs substrate and the absorption coefficient of the n type GaAs substrate to the emission spectrum becomes high. |
