发明名称 |
METHOD OF FABRICATING LATERAL TRANSISTORS AND COMPLEMENTARY TRANSISTORS |
摘要 |
This disclosure is primarily directed to the fabrication and construction of complementary PNP-NPN semiconductor devices in a monlithic integrated form. The devices of this disclosure use an isolation-type diffused region to form at least an emitter region thereby permitting the formation of complementary devices with both emitters having a high injection efficiency.
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申请公布号 |
US3713908(A) |
申请公布日期 |
1973.01.30 |
申请号 |
USD3713908 |
申请日期 |
1970.05.15 |
申请人 |
IBM,US |
发明人 |
AGUSTA B,US;LUBART E,US |
分类号 |
H01L21/761;H01L21/8222;H01L27/082;(IPC1-7):H01L7/36;H01L11/00 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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