发明名称 QUADRANT PHOTODIODE
摘要 A quadrant photodiode including a flat substrate of high resistivity semiconductor material, such as silicon, of one conductivity type having a thin region of the one conductivity type within and extending across one surface thereof and four quadrant shaped regions of the opposite conductivity type in its other surface. The quadrant shaped regions are arranged in a circle with the straight edges of adjacent quadrants being in closely spaced relation. The surface of the substrate having the one conductivity type region therein is provided with V-shaped grooves which are directly opposed to and extend along the spaces between the edges of the quadrant-shaped regions. The surfaces of the grooves serve to refract the light which is incident on the surface toward the quadrant-shaped regions so as to prevent optical cross-talk between the quadrant-shaped regions.
申请公布号 US3714491(A) 申请公布日期 1973.01.30
申请号 USD3714491 申请日期 1970.04.13
申请人 RCA LTD,CA 发明人 MC INTYRE R,CA;SPRINGINGS H,CA
分类号 G01J1/02;G01S3/783;H01L31/02;H01L31/103;H01L31/16;(IPC1-7):H01J39/06;H01L15/06 主分类号 G01J1/02
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