发明名称 Verfahren zum Herstellen eines isolierenden Substrats für Halbleiterbauelemente und eine dazu verwendete, mit einem Muster versehene, Metallplatte.
摘要 In manufacturing an insulation substrate used in a semiconductor device, a metal plate (10) having relatively thick body portions (11a,11b,11c) and relatively thin linkage portions (12,13) is prepared. The body portions are spaced from each other and the linkage portions link up the respective body portions. The metal plate is fixed to a metal flat plate (1) through a resin layer (2). The linkage portions are then removed through selective etching. The structure thus obtained is cut into a plurality of unit structures, to thereby obtain an in insulation substrate having conductive circuit patterns thereon. <IMAGE>
申请公布号 DE69105070(T2) 申请公布日期 1995.03.09
申请号 DE1991605070T 申请日期 1991.08.02
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 TAKAHAMA, SHINOBU, MITSUBISHI DENKI K.K., NISHI-KU, FUKUOKA-SHI, FUKUOKA, JP;KAMISHIMA, KUNITAKA, MITSUBISHI DENKI K.K., NISHI-KU, FUKUOKA-SHI, FUKUOKA, JP
分类号 H05K3/44;H01L21/48;H01L23/12;H01L23/14;H01L23/48;H01L23/495;H05K3/02 主分类号 H05K3/44
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